Mobility extraction for 24-nm-channel length n-MOS using the RFCV technique: Effect of the fabrication process

Conference Object

Abstract: In this article, we study the mobility for short devices (down to 24-nm-channel length) using the RF

Palabras claves:

additional mobility, Halo, n-MOS, RFCV, short channel device, SION, Y-function

Autores:

DIego R. Benalcázar, Jobard G., Luis Miguel Prócel Moya, Trojman L.

Fuentes:

google

scopus