Reliability Assessment of AlGaN/GaN Schottky Barrier Diodes under ON-State Stress

Article

Abstract: This article aims to study the degradation of Schottky Barrier Diodes (SBDs) with a Gated Edge Termi

Palabras claves:

AlGaN/GaN SBD, extrinsic, GET, INTRINSIC, lifetime, on-state, reliability

Autores:

Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Tatiana Moposita, Trojman L.

Fuentes:

scopus