Mostrando 5 resultados de: 5
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Publisher
2020 IEEE 11th Latin American Symposium on Circuits and Systems, LASCAS 2020(1)
2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022(1)
Electronics (Switzerland)(1)
IEEE Transactions on Circuits and Systems II: Express Briefs(1)
IEEE Transactions on Device and Materials Reliability(1)
Área temáticas
Ciencias de la computación(4)
Física aplicada(3)
Instrumentos de precisión y otros dispositivos(1)
A low-voltage, low-power reconfigurable current-mode softmax circuit for analog neural networks
ArticleAbstract: This paper presents a novel low-power low-voltage analog implementation of the softmax function, witPalabras claves:Activation functions, Deep Neural Networks, Machine learning, SoftmaxAutores:Crupi F., Marco Lanuzza, Strangio S., Tatiana Moposita, Trojman L., Vatalaro M., Vladimirescu A.Fuentes:scopusEfficiency of Double-Barrier Magnetic Tunnel Junction-Based Digital eNVM Array for Neuro-Inspired Computing
ArticleAbstract: This brief deals with the impact of spin-transfer torque magnetic random access memory (STT-MRAM) cePalabras claves:double-barrier magnetic tunnel junction (DMTJ), energy-efficiency, MNIST dataset, multilayer perceptron (MPL), online classification, STT-MRAMAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Tatiana Moposita, Trojman L., Vladimirescu A.Fuentes:scopusVoltage-to-Voltage Sigmoid Neuron Activation Function Design for Artificial Neural Networks
Conference ObjectAbstract: An Artificial Neural Network (ANN) involves a complex network of interconnected nodes called artificPalabras claves:Artificial Neural Network, non-linear transfer function, Pseudo Differential Pair, sigmoid activation functionAutores:Crupi F., Marco Lanuzza, Tatiana Moposita, Trojman L., Vladimirescu A.Fuentes:scopusReconfigurable CMOS/STT-MTJ Non-Volatile Circuit for Logic-in-Memory Applications
Conference ObjectAbstract: The unique properties of spin-transfer torque magnetic tunnel junctions (STT-MTJs) have led to promiPalabras claves:logic-in-memory (LIM), Magnetic tunnel junction (MTJ), non-volatile logic gates, spin-transfer torque (STT)Autores:Benjamin Zambrano, Esteban Garzón, Luis Miguel Prócel Moya, Ramiro Taco, Tatiana Moposita, Trojman L.Fuentes:scopusReliability Assessment of AlGaN/GaN Schottky Barrier Diodes under ON-State Stress
ArticleAbstract: This article aims to study the degradation of Schottky Barrier Diodes (SBDs) with a Gated Edge TermiPalabras claves:AlGaN/GaN SBD, extrinsic, GET, INTRINSIC, lifetime, on-state, reliabilityAutores:Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Tatiana Moposita, Trojman L.Fuentes:scopus