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AIN thin films deposited by DC reactive magnetron sputtering: Effect of oxygen on film growth
ArticleAbstract: Aluminum nitride is a ceramic compound with many technological applications in many fields, for examPalabras claves:Autores:Abdallah B., Burgi J., Djouadi M.A., Ferrón J., Feugeas J.N., Gautron E., Gõmez B.J., Javier García Molleja, Jouan P.Y.Fuentes:scopusDepth profiling and morphological characterization of AlN thin films deposited on Si substrates using a reactive sputter magnetron
ArticleAbstract: It is well-known that the characteristics of aluminum nitride thin films mainly depend on their morpPalabras claves:Autores:Bemporad E., Brusa R.S., Burgi J., Feugeas J.N., Javier García Molleja, MacChi C., Mariazzi S., Piccoli M., Somoza A.Fuentes:scopusReactive sputter magnetron reactor for preparation of thin films and simultaneous in situ structural study by X-ray diffraction
ArticleAbstract: The purpose of the designed reactor is (i) to obtain polycrystalline and/or amorphous thin films byPalabras claves:Autores:Burgi J., Craievich A.F., Feugeas J.N., Javier García Molleja, Kellermann G., Neuenschwander R.Fuentes:scopusStructural, morphological and electrical properties of nickel oxide thin films deposited by reactive sputtering
ArticleAbstract: This paper is devoted to the study of the influence of oxygen content in the nickel oxide films on tPalabras claves:C-AFM, DC reactive sputtering, Electrical characterization, Nickel oxide, Nickel vacancyAutores:Corraze B., Ferrec A., Goullet A., Javier García Molleja, Jouan P.Y., Keraudy J., Richard-Plouet M.Fuentes:scopus