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Band-Gap Engineering: Lithium Effect on the Electronic Properties of Hydrogenated 3C-SiC (1 1 0) Surfaces
ArticleAbstract: Silicon carbide has structural strength, high electronic conductivity, low diffusion barrier and higPalabras claves:band-gap, DFT, DOS, Electronic properties, Formation energy, GGA framework, lithium batteries, PDOS, SiC-Li, surfacesAutores:José Luis Cuevas, Martínez M.O., Saravana Prakash ThirumuruganandhamFuentes:googlescopusAb-initio study of anisotropic and chemical surface modifications of β-SiC nanowires
ArticleAbstract: The electronic band structure and electronic density of states of cubic SiC nanowires (SiCNWs) in thPalabras claves:DFT, nanowires, Silicon carbide, surface passivationAutores:Carvajal E., Cruz-Irisson M., José Luis Cuevas, Salazar F., Trejo A.Fuentes:googlescopusFirst principles band gap engineering of [1 1 0] oriented 3C-SiC nanowires
ArticleAbstract: Silicon carbide nanowires offer excellent opportunities for technological applications under harsh ePalabras claves:DFT, Formation energy, SiC Nanowires, surface passivationAutores:Cruz-Irisson M., de Santiago F., José Luis Cuevas, Miranda A., Pérez L.A., Ramírez J., Trejo A.Fuentes:googlescopusElectronic structure and optical vibrational modes of 3C-SiC nanowires
ArticleAbstract: The electronic structure and vibrational optical modes of silicon carbide nanowires (SiCNWs) were stPalabras claves:DFT, nanowires, Phonons, Silicon carbideAutores:Cruz-Irisson M., José Luis Cuevas, Miranda A., Ojeda M., Pérez L.A., Trejo A.Fuentes:googlescopusTheoretical approach to the phonon modes of GaSb nanowires
ArticleAbstract: Gallium Antimonide nanowires (GaSbNWs) have attracted much attention due to their possible applicatiPalabras claves:DFT, Gallium Antimonide, nanowires, PhononsAutores:Calvino M., Cruz-Irisson M., José Luis Cuevas, Miranda A., Ojeda M., Pérez L.A., Salazar F., Trejo A.Fuentes:googlescopus