Influence of the gate bias stress on the stability of n-type organic field-effect transistors based on dicyanovinylene-dihydroindenofluorene semiconductors

Article

Abstract: The electrical stabilities of n-type Organic Field-Effect Transistors (OFETs) based on dihydroindeno

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Autores:

Bebiche S., Harnois M., Jacques E., Mohammed-Brahim T., Pablo A. Cisneros-Pérez, Poriel C., Rault-Berthelot J.

Fuentes:

scopus