Doping of SnO2 with H atoms: An alternative way to attain n-type conductivity

Article

Abstract: We propose an explanation for the origin of n-type electrical conductivity in SnO2 based on the res

Palabras claves:

DFT, H-doping, SnO2

Autores:

A. Stashans, L. Villamagua Conza

Fuentes:

rraae