Documentos de Tulupenko V. | REDI

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Mostrando 3 resultados de: 3

Filtros aplicados

Área de conocimiento: "Ciencia de materiales"

Subtipo de publicación

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Semiconductor Science and Technology(2)

Nanomaterials(1)

Área temáticas

Electricidad y electrónica(2)

Física aplicada(2)

Explosivos, combustibles y productos relacionados(1)

Física moderna(1)

Área de conocimiento

Nanostructura(1)

Semiconductor(1)

Año de Publicación

Origen

Palabras Claves

Impurity binding energy(2)

Modulation doping(2)

Binding energy(1)

Donor impurity(1)

Ground state energy(1)

Background impurities and a delta-doped QW. Part I: Center doping

Abstract: The influence of shallow background donor impurities on the energy characteristics of the SiGe/Si/Si

Palabras claves:

Impurity binding energy, Modulation doping, self-consistent calculation, semiconductor quantum wells

Akimov V., David Laroze, Demediuk R., Duque C.A., Kovalov V., Morales A.L., Sushchenko D., Tiutiunnyk A., Tulupenko V.

Background impurities in a delta-doped QW. Part II: Edge doping

Abstract: This is the second part of our study of the background impurity influence on the intersubband energy

Palabras claves:

Impurity binding energy, Modulation doping, Quantum well, self-consistent method

Akimov V., David Laroze, Demediuk R., Duque C.A., Kovalov V., Morales A.L., Sushchenko D., Tiutiunnyk A., Tulupenko V.

First Study on the Electronic and Donor Atom Properties of the Ultra-Thin Nanoflakes Quantum Dots

Abstract: Nanoflakes ultra-thin quantum dots are theoretically studied as innovative nanomaterials delivering

Palabras claves:

Binding energy, Donor impurity, Ground state energy, Nanoflakes, Ultra-thin quantum dot

Belamkadem L., Boussetta R., Chnafi M., David Laroze, Duque C.A., Kasapoglu E., Laura M. Pérez, Meziani Y.M., Mommadi O., Moussaouy A.E., Tulupenko V., Vinasco J.A.