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Semiconductor Science and Technology(2)
2022 IEEE 41st International Conference on Electronics and Nanotechnology, ELNANO 2022 - Proceedings(1)
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scopus(4)
Background impurities and a delta-doped QW. Part I: Center doping
ArticleAbstract: The influence of shallow background donor impurities on the energy characteristics of the SiGe/Si/SiPalabras claves:Impurity binding energy, Modulation doping, self-consistent calculation, semiconductor quantum wellsAutores:Akimov V., David Laroze, Demediuk R., Duque C.A., Kovalov V., Morales A.L., Sushchenko D., Tiutiunnyk A., Tulupenko V.Fuentes:scopusBackground impurities in a delta-doped QW. Part II: Edge doping
ArticleAbstract: This is the second part of our study of the background impurity influence on the intersubband energyPalabras claves:Impurity binding energy, Modulation doping, Quantum well, self-consistent methodAutores:Akimov V., David Laroze, Demediuk R., Duque C.A., Kovalov V., Morales A.L., Sushchenko D., Tiutiunnyk A., Tulupenko V.Fuentes:scopusElectronic structure of vertically coupled quantum dot-ring heterostructures under applied electromagnetic probes. A finite-element approach
ArticleAbstract: We theoretically investigate the electron and hole states in a semiconductor quantum dot-quantum rinPalabras claves:Autores:David Laroze, Duque C.A., Heyn C., Hieu N.N., Mora-Ramos M.E., Morales A.L., Ojeda J.H., Phuc H.V., Radu A., Restrepo R.L., Tulupenko V., Vinasco J.A.Fuentes:scopusIntersubband Energy Differences of Delta-Doped Quantum Wells in External Electric Field
Conference ObjectAbstract: The energy differences between subbands of a semiconductor quantum well delta-doped inside the wellPalabras claves:electric field, Modulation doping, shallow impurity, SiGe quantum wellsAutores:Akimov V., David Laroze, Demediuk R., Duque C.A., Fomina O., Morales A.L., Sushchenko D., Tiutiunnyk A., Tulupenko V.Fuentes:scopus