Mostrando 4 resultados de: 4
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Ingeniería electrónica(4)
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scopus(4)
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits
ArticleAbstract: In this work, a complementary InAs/Al0.05Ga0.95Sb tunnel field-effect-Transistor (TFET) virtual techPalabras claves:full-Adder, III-V, tunnel field effect transistor (TFET), very large scale integration (VLSI).Autores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Selmi L., Strangio S.Fuentes:scopusBenchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits
ArticleAbstract: In this work, a benchmark for low-power digital applications of a III-V TFET technology platform agaPalabras claves:Full adders, III-V, Ripple carry adders, TFETAutores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Selmi L., Strangio S.Fuentes:scopusDigital and analog TFET circuits: Design and benchmark
ReviewAbstract: In this work, we investigate by means of simulations the performance of basic digital, analog, and mPalabras claves:Analog circuits, digital circuits, Simulation, TCAD, Tunnel-FETAutores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Selmi L., Settino F., Strangio S.Fuentes:scopusUnderstanding the potential and limitations of tunnel FETs for low-voltage analog/mixed-signal circuits
ArticleAbstract: In this paper, the analog/mixed-signal performance is evaluated at device and circuit levels for a IPalabras claves:Analog circuits, Analog figures of merit, Comparators, Track and hold (T/H), tunnel FET (TFET)Autores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Selmi L., Settino F., Strangio S.Fuentes:scopus