Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits

Article

Abstract: In this work, a complementary InAs/Al0.05Ga0.95Sb tunnel field-effect-Transistor (TFET) virtual tech

Palabras claves:

full-Adder, III-V, tunnel field effect transistor (TFET), very large scale integration (VLSI).

Autores:

Crupi F., Esseni D., Marco Lanuzza, Palestri P., Selmi L., Strangio S.

Fuentes:

scopus