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A simple method for reducing THD and improving the efficiency in CSI topology based on SiC power devices
ArticleAbstract: Silicon carbide (SiC)-based switching devices provide significant performance improvements in many aPalabras claves:Current source inverter (CSI), DC–AC converter, Power Converter, Silicon Carbide (SiC), total harmonic distortion (THD)Autores:Efrén Fernández Palomeque, Paredes-Camacho A., Romeral Martinez L., Sala V.Fuentes:scopusMethod to reduce THD and improve efficiency in SiC power converter
Conference ObjectAbstract: This paper presents a method to reduce total harmonic distortion (THD) and improve efficiency of a tPalabras claves:CSI, FOC CONTROL, SiC, Surface Mounted Permanent Magnet SynchronousAutores:Efrén Fernández Palomeque, Paredes-Camacho A., Romeral Martinez L., Sala V.Fuentes:scopusPerformance analysis of switching devices for wireless EV charging systems
Conference ObjectAbstract: This paper presents a performance analysis of the power inverter and switching devices for wirelessPalabras claves:Electric vehicles, Power inverters, Power Losses, Switching devices, Wireless ChargingAutores:Efrén Fernández Palomeque, Paredes-Camacho A., Romeral Martinez L., Sala V.Fuentes:scopusSwitching trajectory improvement of SiC MOSFET devices using a feedback gate driver
Conference ObjectAbstract: In this paper, a feedback active gate driver (AGD) based on a multistage technique for improving thePalabras claves:Feedback gate driver, oscillations, Power Losses, Silicon carbide MOSFETAutores:Efrén Fernández Palomeque, Ghorbani H., Paredes-Camacho A., Romeral Martinez L., Sala V.Fuentes:scopus