Main properties of Al<inf>2</inf>O<inf>3</inf> thin films deposited by magnetron sputtering of an Al<inf>2</inf>O<inf>3</inf> ceramic target at different radio-frequency power and argon pressure and their passivation effect on p-type c-Si wafers

Article

Abstract: In this work, 50-nm thick Al2O3 thin films were deposited at room temperature by magnetron sputterin

Palabras claves:

Alumina, lifetime, Quasi-steady-state photoconductance, Radio-frequency power, silicon, Sputtering, surface passivation

Autores:

Andreu J., Asensi J., Bertomeu J., Caballero A., García-Valenzuela J., Gerling L., Morales-Vilches A., Richard Rivera, Voz C.

Fuentes:

scopus