Mostrando 2 resultados de: 2
Effect of Large Uniaxial Stress on the Thermoelectric Properties of Microcrystalline Silicon Thin Films
ArticleAbstract: This study reports on the behaviour of the thermoelectric properties of n- and p-type hydrogenated mPalabras claves:annealing, microcrystalline silicon, Power factor, TEMPERATURE, Thermoelectric, thin films, uniaxial stressAutores:Acosta E., Bennett N.S., Christian Pillajo, Erick de la Cadena, Smirnov V., Szabo P.S.B.Fuentes:scopusTransparent silicon carbide/tunnel SiO<inf>2</inf> passivation for c-Si solar cell front side: Enabling J<inf>sc</inf> > 42 mA/cm<sup>2</sup> and iV<inf>oc</inf> of 742 mV
ArticleAbstract: N-type microcrystalline silicon carbide (μc-SiC:H(n)) is a wide bandgap material that is very promisPalabras claves:antireflecting coating, excellent passivation, Heterojunction, hot wire CVD, lean process, Refractive index, Silicon carbide, tunnel oxideAutores:Ding K., Eberst A., Finger F., Isabella O., Kim D.Y., Köhler M., Li S., Paul Procel, Pomaska M., Qiu K., Rau U., Singh A., Smirnov V., Zamchiy A., Zeman M.Fuentes:scopus