De Jaeger B.
31
Coauthors
6
Documentos
Volumen de publicaciones por año
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| Año de publicación | Num. Publicaciones |
|---|---|
| 2018 | 2 |
| 2019 | 1 |
| 2020 | 1 |
| 2021 | 1 |
| 2022 | 1 |
Publicaciones por áreas de conocimiento
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| Área de conocimiento | Num. Publicaciones |
|---|---|
| Ingeniería electrónica | 8 |
| Ciencia de materiales | 6 |
| Semiconductor | 2 |
| Energía | 2 |
Publicaciones por áreas temáticas
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| Área temática | Num. Publicaciones |
|---|---|
| Física aplicada | 6 |
| Electricidad y electrónica | 2 |
Principales fuentes de datos
| Origen | Num. Publicaciones |
|---|---|
| Scopus | 6 |
| Google Scholar | 5 |
| RRAAE | 0 |
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Coautores destacados por número de publicaciones
| Coautor | Num. Publicaciones |
|---|---|
| Eliana Acurio | 6 |
| Trojman L. | 6 |
| Decoutere S. | 5 |
| Bakeroot B. | 5 |
| Crupi F. | 4 |
| Ronchi N. | 3 |
| Tatiana Moposita | 1 |
| Iucolano F. | 1 |
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Publicaciones del autor
Reliability Study on Diodes Based on AlGaN/GaN During the On State
ArticleAbstract: This work aims to study the degradation of Schottky Barrier Diodes (SBD) with a gated edge terminatiPalabras claves:AlGaN/GaN, diodes, INTRINSIC, reliability, Schottky barrierAutores:Bakeroot B., De Jaeger B., Eliana Acurio, Trojman L.Fuentes:googlescopusON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric
Conference ObjectAbstract: The degradation of Schottky Barrier Diodes (SBDs) with a Gated Edge Termination (GET) under on-statePalabras claves:de-trapping, GaN, interfacial layer, nitride, on-state, oxide, Schottky diode, trapping rateAutores:Bakeroot B., De Jaeger B., Decoutere S., Eliana Acurio, Trojman L.Fuentes:googlescopusReliability Assessment of AlGaN/GaN Schottky Barrier Diodes under ON-State Stress
ArticleAbstract: This article aims to study the degradation of Schottky Barrier Diodes (SBDs) with a Gated Edge TermiPalabras claves:AlGaN/GaN SBD, extrinsic, GET, INTRINSIC, lifetime, on-state, reliabilityAutores:Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Tatiana Moposita, Trojman L.Fuentes:scopusInfluence of GaN- and Si <inf>3</inf> N <inf>4</inf> -Passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
ArticleAbstract: This paper analyses the influence of the GaN and Si 3 N 4 passivation (or 'cap') layer on the top ofPalabras claves:activation energy, AlGaN/GaN Schottky diode, breakdown voltage, GaN cap, off-state, passivation layer, reliability, Si N cap 3 4Autores:Bakeroot B., Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Ronchi N., Trojman L.Fuentes:googlescopusReliability improvements in AlGaN/GaN schottky barrier diodes with a gated edge termination
ArticleAbstract: This paper focuses on the time-dependent breakdown of the AlGaN/GaN Schottky barrier diodes with a gPalabras claves:AlGaN/GaN Schottky diode, gated edge termination (GET), hard breakdown, intrinsic failures, off-state, reliability, Weibull distributionAutores:Bakeroot B., Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Ronchi N., Trojman L.Fuentes:googlescopus