Reliability in GaN-based devices for power applications

Conference Object

Abstract: This paper analyzes two important reliability issues in AlGaN/GaN devices: positive bias temperature

Palabras claves:

AlGaN/GaN SBD, breakdown voltage, de-trapping, GET, MOS-HEMT, PBTI, reliability, TDDB, TRAPPING

Autores:

Bakeroot B., Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Iucolano F., Ronchi N., Trojman L.

Fuentes:

google

scopus