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Reliability Assessment of AlGaN/GaN Schottky Barrier Diodes under ON-State Stress
ArticleAbstract: This article aims to study the degradation of Schottky Barrier Diodes (SBDs) with a Gated Edge TermiPalabras claves:AlGaN/GaN SBD, extrinsic, GET, INTRINSIC, lifetime, on-state, reliabilityAutores:Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Tatiana Moposita, Trojman L.Fuentes:scopusReliability Study on Diodes Based on AlGaN/GaN During the On State
ArticleAbstract: This work aims to study the degradation of Schottky Barrier Diodes (SBD) with a gated edge terminatiPalabras claves:AlGaN/GaN, diodes, INTRINSIC, reliability, Schottky barrierAutores:Bakeroot B., De Jaeger B., Eliana Acurio, Trojman L.Fuentes:googlescopus