Influence of GaN- and Si <inf>3</inf> N <inf>4</inf> -Passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination

Article

Abstract: This paper analyses the influence of the GaN and Si 3 N 4 passivation (or 'cap') layer on the top of

Palabras claves:

activation energy, AlGaN/GaN Schottky diode, breakdown voltage, GaN cap, off-state, passivation layer, reliability, Si N cap 3 4

Autores:

Bakeroot B., Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Ronchi N., Trojman L.

Fuentes:

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scopus