Reliability Study on Diodes Based on AlGaN/GaN During the On State

Article

Abstract: This work aims to study the degradation of Schottky Barrier Diodes (SBD) with a gated edge terminati

Palabras claves:

AlGaN/GaN, diodes, INTRINSIC, reliability, Schottky barrier

Autores:

Bakeroot B., De Jaeger B., Eliana Acurio, Trojman L.

Fuentes:

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scopus