ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric

Conference Object

Abstract: The degradation of Schottky Barrier Diodes (SBDs) with a Gated Edge Termination (GET) under on-state

Palabras claves:

de-trapping, GaN, interfacial layer, nitride, on-state, oxide, Schottky diode, trapping rate

Autores:

Bakeroot B., De Jaeger B., Decoutere S., Eliana Acurio, Trojman L.

Fuentes:

google

scopus