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Background impurities and a delta-doped QW. Part I: Center doping
ArticleAbstract: The influence of shallow background donor impurities on the energy characteristics of the SiGe/Si/SiPalabras claves:Impurity binding energy, Modulation doping, self-consistent calculation, semiconductor quantum wellsAutores:Akimov V., David Laroze, Demediuk R., Duque C.A., Kovalov V., Morales A.L., Sushchenko D., Tiutiunnyk A., Tulupenko V.Fuentes:scopusBackground impurities in a delta-doped QW. Part II: Edge doping
ArticleAbstract: This is the second part of our study of the background impurity influence on the intersubband energyPalabras claves:Impurity binding energy, Modulation doping, Quantum well, self-consistent methodAutores:Akimov V., David Laroze, Demediuk R., Duque C.A., Kovalov V., Morales A.L., Sushchenko D., Tiutiunnyk A., Tulupenko V.Fuentes:scopusElectronic properties and hydrogenic impurity binding energy of a new variant quantum dot
ArticleAbstract: In this work, we have studied the electronic states with and without a donor impurity positioned onPalabras claves:Binding energy, Donor impurity, Finite difference method, Ground state energy, Variant quantum dotAutores:Belamkadem L., Chnafi M., David Laroze, Duque C.A., Mommadi O., Moussaouy A.E., Vinasco J.A.Fuentes:scopusElectronic structure of vertically coupled quantum dot-ring heterostructures under applied electromagnetic probes. A finite-element approach
ArticleAbstract: We theoretically investigate the electron and hole states in a semiconductor quantum dot-quantum rinPalabras claves:Autores:David Laroze, Duque C.A., Heyn C., Hieu N.N., Mora-Ramos M.E., Morales A.L., Ojeda J.H., Phuc H.V., Radu A., Restrepo R.L., Tulupenko V., Vinasco J.A.Fuentes:scopusElectron–phonon interaction in quantum transport through quantum dots and molecular systems
ArticleAbstract: The quantum transport and effects of decoherence properties are studied in quantum dots systems andPalabras claves:Decoherence, Green's functions, Molecular and quantum systems, Shot noiseAutores:David Laroze, Duque C.A., Ojeda J.H.Fuentes:scopusEffects of applied lateral electric field and hydrostatic pressure on the intraband optical transitions in a GaAs / Ga 1 <inf>-x</inf><sup>Alx</sup>As quantum ring
ArticleAbstract: In this paper the simultaneous effects of applied lateral electric field and hydrostatic pressure onPalabras claves:electric field, Hydrostatic pressure, Intraband absorption coefficient, Quantum ringAutores:Barseghyan M.G., David Laroze, Duque C.A., Kirakosyan A.A., Manaselyan A.Fuentes:scopusHydrostatic pressure and temperature effects on spectrum of an off-center single dopant in a conical quantum dot with spherical edge
ArticleAbstract: In this paper we have studied the spectrum of an off-center donor impurity confined in the GaAs coniPalabras claves:Conical quantum dot with spherical edge, Diamagnetic susceptibility, Dipole moment, Hydrostatic pressure, Impurity binding energy, TEMPERATUREAutores:Belamkadem L., Boussetta R., Chnafi M., David Laroze, Duque C.A., El Hadi M., Falyouni F., Mommadi O., Mora-Rey F., Moussaouy A.E., Vinasco J.A.Fuentes:scopusOptical properties and conductivity of biased GaAs quantum dots
ArticleAbstract: We report the intraband optical absorption influence on the tunneling currents in biased gallium arsPalabras claves:absorption coefficient, Electrical conductivity, Intraband transitions, quantum dots, Tunnel effectAutores:Aqiqi S., David Laroze, Duque C.A., Gil-Corrales J.A., Morales A.L., Radu A., Vinasco J.A.Fuentes:scopusInfluence of conduction-band non-parabolicity on terahertz intersubband Raman gain in GaAs/InGaAs step asymmetric quantum wells
ArticleAbstract: The conduction electron states in step-like strained GaAs/InGaAs quantum wells are theoretically invPalabras claves:Autores:David Laroze, Duque C.A., Mora-Ramos M.E., Pérez-Quintana I., Tiutiunnyk A.Fuentes:scopusIntersubband Energy Differences of Delta-Doped Quantum Wells in External Electric Field
Conference ObjectAbstract: The energy differences between subbands of a semiconductor quantum well delta-doped inside the wellPalabras claves:electric field, Modulation doping, shallow impurity, SiGe quantum wellsAutores:Akimov V., David Laroze, Demediuk R., Duque C.A., Fomina O., Morales A.L., Sushchenko D., Tiutiunnyk A., Tulupenko V.Fuentes:scopus