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Background impurities and a delta-doped QW. Part I: Center doping
ArticleAbstract: The influence of shallow background donor impurities on the energy characteristics of the SiGe/Si/SiPalabras claves:Impurity binding energy, Modulation doping, self-consistent calculation, semiconductor quantum wellsAutores:Akimov V., David Laroze, Demediuk R., Duque C.A., Kovalov V., Morales A.L., Sushchenko D., Tiutiunnyk A., Tulupenko V.Fuentes:scopusBackground impurities in a delta-doped QW. Part II: Edge doping
ArticleAbstract: This is the second part of our study of the background impurity influence on the intersubband energyPalabras claves:Impurity binding energy, Modulation doping, Quantum well, self-consistent methodAutores:Akimov V., David Laroze, Demediuk R., Duque C.A., Kovalov V., Morales A.L., Sushchenko D., Tiutiunnyk A., Tulupenko V.Fuentes:scopusElectronic properties and hydrogenic impurity binding energy of a new variant quantum dot
ArticleAbstract: In this work, we have studied the electronic states with and without a donor impurity positioned onPalabras claves:Binding energy, Donor impurity, Finite difference method, Ground state energy, Variant quantum dotAutores:Belamkadem L., Chnafi M., David Laroze, Duque C.A., Mommadi O., Moussaouy A.E., Vinasco J.A.Fuentes:scopusElectronic structure of vertically coupled quantum dot-ring heterostructures under applied electromagnetic probes. A finite-element approach
ArticleAbstract: We theoretically investigate the electron and hole states in a semiconductor quantum dot-quantum rinPalabras claves:Autores:David Laroze, Duque C.A., Heyn C., Hieu N.N., Mora-Ramos M.E., Morales A.L., Ojeda J.H., Phuc H.V., Radu A., Restrepo R.L., Tulupenko V., Vinasco J.A.Fuentes:scopusOptical properties and conductivity of biased GaAs quantum dots
ArticleAbstract: We report the intraband optical absorption influence on the tunneling currents in biased gallium arsPalabras claves:absorption coefficient, Electrical conductivity, Intraband transitions, quantum dots, Tunnel effectAutores:Aqiqi S., David Laroze, Duque C.A., Gil-Corrales J.A., Morales A.L., Radu A., Vinasco J.A.Fuentes:scopusInfluence of conduction-band non-parabolicity on terahertz intersubband Raman gain in GaAs/InGaAs step asymmetric quantum wells
ArticleAbstract: The conduction electron states in step-like strained GaAs/InGaAs quantum wells are theoretically invPalabras claves:Autores:David Laroze, Duque C.A., Mora-Ramos M.E., Pérez-Quintana I., Tiutiunnyk A.Fuentes:scopusTunneling influence on the intersubband optical absorption coefficient and refraction index in biased GaAs/AlGaAs quantum well wires
ArticleAbstract: We investigate the tunnel effect influence on the intersubband optical absorption and refraction inPalabras claves:absorption coefficient, electric field, Intersubband transition, Quantum well wire, Refraction index, SEMICONDUCTOR, Tunnel effectAutores:Aqiqi S., David Laroze, Duque C.A., Radu A., Vinasco J.A.Fuentes:scopusThe intensity and direction of the electric field effects on off-center shallow-donor impurity binding energy in wedge-shaped cylindrical quantum dots
ArticleAbstract: Taking into account an infinite confinement potential, including the influence of external electricPalabras claves:Binding energy, Donor impurity, electric field, Wedge-shaped cylindrical quantum dotAutores:Belamkadem L., Boussetta R., Chnafi M., Chouef S., David Laroze, Duque C.A., Fobasso Mbognou F.C., Kenfack-Sadem C., Kerkour El-Miad A., Keumo Tsiaze R.M., Mommadi O., Moussaouy A.E., Vinasco J.A.Fuentes:scopus