Switching trajectory improvement of SiC MOSFET devices using a feedback gate driver

Conference Object

Abstract: In this paper, a feedback active gate driver (AGD) based on a multistage technique for improving the

Palabras claves:

Feedback gate driver, oscillations, Power Losses, Silicon carbide MOSFET

Autores:

Efrén Fernández Palomeque, Ghorbani H., Paredes-Camacho A., Romeral Martinez L., Sala V.

Fuentes:

scopus