Statistical Deviations from the Theoretical Only-SBU Model to Estimate MCU Rates in SRAMs

Article

Abstract: This paper addresses a well-known problem that occurs when memories are exposed to radiation: the de

Palabras claves:

Multiple cell upsets (MCUs), single bit upsets (SBUs), single events, soft errors, static random access memories (SRAMs)

Autores:

Agapito J.A., Baylac M., Clemente J.A., Francesca Villa, Franco F.J., Hubert G., Mecha H., Puchner H., Rey S., Velazco R.

Fuentes:

scopus