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Assessing the Static and Dynamic Sensitivity of a Commercial Off-the-Shelf Multicore Processor for Noncritical Avionic Applications
Conference ObjectAbstract: The present work assesses the radiation sensitivity of an affordable and performant COTS multicore pPalabras claves:Autores:Pablo F. Ramos, PABLO FRANCISCO RAMOS VARGAS, VANESSA CAROLINA VARGAS VALLEJO, Vanessa Vargas, Velazco R., Zergainoh N.E.Fuentes:googlescopusEvaluation by neutron radiation of the nmr-mpar fault-tolerance approach applied to applications running on a 28-nm many-core processor
ArticleAbstract: Currently, there is a special interest in validating the use of Commercial-Off-The-Shelf (COTS) multPalabras claves:Many-core processor, partitioning, Radiation ground testing, redundancy, Single event effect, Single event upsetAutores:Pablo F. Ramos, PABLO FRANCISCO RAMOS VARGAS, VANESSA CAROLINA VARGAS VALLEJO, Vanessa Vargas, Velazco R.Fuentes:googlescopusNMR-MPar: A fault-tolerance approach for multi-core and many-core processors
ArticleAbstract: Multi-core and many-core processors are a promising solution to achieve high performance by maintainPalabras claves:fault injection, Fault tolerance, Many-core, Multi-core, partitioning, redundancy, reliabilityAutores:Mehaut J.F., Pablo F. Ramos, PABLO FRANCISCO RAMOS VARGAS, VANESSA CAROLINA VARGAS VALLEJO, Vanessa Vargas, Velazco R.Fuentes:googlescopusSEE Error-Rate Evaluation of an Application Implemented in COTS Multicore/Many-Core Processors
ArticleAbstract: This paper evaluates the error rate of a memory-bound application implemented in different commerciaPalabras claves:Accelerated testing, Error rate, fault injection, many core, Multicore, reliability, single-event effect (SEE), single-event upset (SEU), Soft errorAutores:Baylac M., Pablo F. Ramos, Vanessa Vargas, Velazco R., Zergainoh N.E.Fuentes:scopusSEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2-MeV Neutrons
ArticleAbstract: This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias voltagePalabras claves:Commercial off-the-shelf (COTS), low bias voltage, neutron tests, radiation hardness, reliability, Soft error, static random access memories (SRAM)Autores:Baylac M., Clemente J.A., Fraire J., Francesca Villa, Franco F.J., Hubert G., Mecha H., Puchner H., Rey S., Velazco R.Fuentes:scopus