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Electronic structure of vertically coupled quantum dot-ring heterostructures under applied electromagnetic probes. A finite-element approach
ArticleAbstract: We theoretically investigate the electron and hole states in a semiconductor quantum dot-quantum rinPalabras claves:Autores:David Laroze, Duque C.A., Heyn C., Hieu N.N., Mora-Ramos M.E., Morales A.L., Ojeda J.H., Phuc H.V., Radu A., Restrepo R.L., Tulupenko V., Vinasco J.A.Fuentes:scopusInfluence of conduction-band non-parabolicity on terahertz intersubband Raman gain in GaAs/InGaAs step asymmetric quantum wells
ArticleAbstract: The conduction electron states in step-like strained GaAs/InGaAs quantum wells are theoretically invPalabras claves:Autores:David Laroze, Duque C.A., Mora-Ramos M.E., Pérez-Quintana I., Tiutiunnyk A.Fuentes:scopus