Mostrando 3 resultados de: 3
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Microelectronics Reliability(1)
PCIM Europe Conference Proceedings(1)
Solid-State Electronics(1)
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Física aplicada(3)
BTI saturation and universal relaxation in SiC power MOSFETs
ArticleAbstract: This work focuses on the positive bias temperature instability of SiC-based MOSFETs under differentPalabras claves:de-trapping, PBTI, recovery, SiC, TRAPPING, Universal relaxation, Zafar's modelAutores:Crupi F., Eliana Acurio, Meneghesso G., Reggiani S., Sánchez LuisFuentes:scopusOn recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT
ArticleAbstract: This experimental study focuses on the positive bias temperature instability (PBTI) in a fully recesPalabras claves:AlGaN/GaN MOS-HEMT, Oxide traps, PBTI, Recessed gate, SiO 2Autores:Crupi F., Eliana Acurio, Iucolano F., Magnone P., Meneghesso G., Trojman L.Fuentes:googlescopusThreshold voltage instability in SiC power MOSFETs
Conference ObjectAbstract: Charge trapping and de-trapping phenomena in SiC power MOSFETs were investigated by performing two dPalabras claves:Autores:Consentino G., Crupi F., Esteban Guevara, Meneghesso G., Reggiani S., Sánchez LuisFuentes:scopus