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scopus(7)
Adjusting thermal stability in double-barrier MTJ for energy improvement in cryogenic STT-MRAMs
ArticleAbstract: This paper investigates the impact of thermal stability relaxation in double-barrier magnetic tunnelPalabras claves:77 K, Cryogenic cache, Cryogenic electronics, double-barrier magnetic tunnel junction (DMTJ), STT-MRAM, Thermal stability relaxationAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A., Trojman L.Fuentes:scopusDesign guidelines for a metallization scheme with multiple-emitter contact lines in BC-BJ solar cells
ArticleAbstract: This work presents a study on back contact-back junction solar cells when using a metallization schePalabras claves:BC-BJ solar cells, Metallization, Photovoltaics, TCAD simulationAutores:Crupi F., Guerra N., Marco Guevara, Marco Lanuzza, Paul Procel, Rose R.D.Fuentes:scopusExploiting Double-Barrier MTJs for Energy-Efficient Nanoscaled STT-MRAMs
Conference ObjectAbstract: This paper explores performance and technology-scalability of STT-MRAMs exploiting double-barrier MTPalabras claves:double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAM, technology-voltage scalingAutores:Carpentieri M., Crupi F., Esteban Garzón, Finocchio G., Marco Lanuzza, Rose R.D., Trojman L.Fuentes:scopusExploiting STT-MRAMs for Cryogenic Non-Volatile Cache Applications
ArticleAbstract: This paper evaluates the potential of spin-transfer torque magnetic random-access memories (STT-MRAMPalabras claves:77 K, cache memory, cold computing, Cryogenic, STT-MRAMAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A.Fuentes:scopusImpact of Scaling on Physical Unclonable Function Based on Spin-Orbit Torque
ArticleAbstract: We analyze the scalability of a spin-orbit torque random access memory (SOT-MRAM)-based physical uncPalabras claves:CMOS/spintronic circuit, micromagnetics, physical unclonable function, Spin electronics, spin-orbit torque random access memory, three-Terminal devicesAutores:Carpentieri M., Chiappini S., Crupi F., Finocchio G., Marco Lanuzza, Puliafito V., Rose R.D.Fuentes:scopusRelaxing non-volatility for energy-efficient DMTJ based cryogenic STT-MRAM
ArticleAbstract: Spin-transfer torque magnetic random-access memory (STT-MRAM) is considered as a premiere candidatePalabras claves:77 K, Cryogenic computing, double-barrier magnetic tunnel junction (DMTJ), STT-MRAM, Thermal stability relaxationAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A., Trojman L.Fuentes:scopusSmart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing
ArticleAbstract: Smart material implication (SIMPLY) logic has been recently proposed for the design of energy-efficiPalabras claves:Compact modeling, Logic-in-Memory, Material implication, SIMPLY, STT-MTJAutores:Crupi F., Marco Lanuzza, Pavan P., Puglisi F.M., Rose R.D., Zanotti T.Fuentes:scopus