Mostrando 3 resultados de: 3
Compact Modeling of Perpendicular STT-MTJs with Double Reference Layers
ArticleAbstract: This paper shows the steps to set up a simulation framework for perpendicular spin-transfer torque (Palabras claves:compact model, Double-barrier MTJ, non-volatile flip-flop (NVFF), STT switchingAutores:Carpentieri M., Crupi F., D'Aquino M., Finocchio G., Marco Lanuzza, Rose R.D.Fuentes:scopusExploiting STT-MRAMs for Cryogenic Non-Volatile Cache Applications
ArticleAbstract: This paper evaluates the potential of spin-transfer torque magnetic random-access memories (STT-MRAMPalabras claves:77 K, cache memory, cold computing, Cryogenic, STT-MRAMAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A.Fuentes:scopusVariability-Aware Analysis of Hybrid MTJ/CMOS Circuits by a Micromagnetic-Based Simulation Framework
ArticleAbstract: Magnetic tunnel junctions (MTJs) are attracting an increasing interest due to their potentiality forPalabras claves:hybrid MTJ/CMOS circuits, Magnetic tunnel junction (MTJ), spintronicsAutores:Carpentieri M., Crupi F., Finocchio G., Marco Lanuzza, Rose R.D., Siracusano G., Tomasello R.Fuentes:scopus