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scopus(2)
First-principles study of oxygen and aluminum defects in β-Si <inf>3</inf>N<inf>4</inf>: Compensation and charge trapping
ArticleAbstract: Formation energies for oxygen and aluminum defects in hexagonal silicon nitride (β-Si3N4) were calcuPalabras claves:Al defects, Charge transitions, Charge traps, Oxygen defects, Silicon clusters, Silicon nitridesAutores:Añez R., Arreghini A., Beyer V., Breuil L., Czernohorsky M., David Santiago Coll, Degraeve R., Elliott S.D., Grillo M.E., Rodríguez J.A., Shariq A., Suhane A.Fuentes:scopusExperimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO<inf>2</inf>-based resistive random access memories
ArticleAbstract: The quantum point contact (QPC) model for dielectric breakdown is used to explain the electron transPalabras claves:Autores:Crupi F., Degraeve R., Goux L., J. Moreno, Luis Miguel Prócel Moya, Maccaronio V., Simoen E., Trojman L.Fuentes:scopus