Phonons in SiC from INS, IXS, and Ab-initio calculations

Conference Object

Abstract: Preliminary results for the phonon dispersion curves of hexagonal 4H-SiC from experimental inelastic

Palabras claves:

3C-SiC, 4H-SiC, Ab initio calculation, Inelastic neutron scattering, Inelastic X-ray scattering, Phonon dispersion, Scattering intensity

Autores:

Bosak A., Choyke W.J., Dorner B., Ivanov A., Jorge Serrano, Krisch M., Malorny M., Stojetz B., Strauch D.

Fuentes:

scopus