Quantum capacitance transient phenomena in high-k dielectric armchair graphene nanoribbon field-effect transistor model

Article

Abstract: Graphene Nanoribbons (GNRs) are an emerging candidate to challenge the place of current semiconducto

Palabras claves:

2d materials, Armchair graphene nanoribbon field effect transistor (AGNRFET), Graphene, High-k dielectric, Low Power, Quantum capacitance, Tunnel FETs

Autores:

Avnon A., Esteban Garzón, Golman R., Marco Lanuzza, Ngo H.D., Teman A.

Fuentes:

scopus