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Characterization and Modeling of BTI in SiC MOSFETs
Conference ObjectAbstract: SiC power MOSFETs have been investigated by performing two different kinds of measurements, the hystPalabras claves:Autores:Consentino G., Cornigli D., Crupi F., Fiegna C., Reggiani S., Sánchez Luis, Sangiorgi E., Tallarico A.N., Valdivieso C.Fuentes:scopusA New Effective Methodology for Semiconductor Power Devices HTRB Testing
ArticleAbstract: An advanced high-temperature reverse bias (HTRB) testing procedure for performing reliability testsPalabras claves:High-temperature reverse bias (HTRB), instrumentation, Power devices, reliability, thermal runawayAutores:Consentino G., D'Ignoti A., Fragomeni L., Galiano S., Grimaldi A., Jorge Hernandez-Ambato, Pace C.Fuentes:googlescopusInnovative instrumentation for HTRB tests on semiconductor power devices
Conference ObjectAbstract: An automated system designed to perform reliability tests on power transistors is reported. An innovPalabras claves:Cycles stress, HTRB, Mini-heater, Power devices, reliability, Thermal controlAutores:Consentino G., D'Ignoti A., De Pasquale D., Galiano S., Giordano C., Jorge Hernandez-Ambato, Mazzeo M., Pace C.Fuentes:googlescopusThreshold voltage instability in SiC power MOSFETs
Conference ObjectAbstract: Charge trapping and de-trapping phenomena in SiC power MOSFETs were investigated by performing two dPalabras claves:Autores:Consentino G., Crupi F., Esteban Guevara, Meneghesso G., Reggiani S., Sánchez LuisFuentes:scopus