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Four current examples of characterization of silicon carbide
Conference ObjectAbstract: A description is given of the profiling of CVD grown 3C SiC on undulant (001) Si using low temperatuPalabras claves:Autores:Bai S., Cardona M., Choyke W.J., Devaty R.P., Dorner B., Hobgood D., Jorge Serrano, Ke Y., Kimoto T., Nagasawa H., Porter L.M., Shigiltchoff O., Shishkin Y., Stojetz B., Strauch D.Fuentes:scopusPhonons in SiC from INS, IXS, and Ab-initio calculations
Conference ObjectAbstract: Preliminary results for the phonon dispersion curves of hexagonal 4H-SiC from experimental inelasticPalabras claves:3C-SiC, 4H-SiC, Ab initio calculation, Inelastic neutron scattering, Inelastic X-ray scattering, Phonon dispersion, Scattering intensityAutores:Bosak A., Choyke W.J., Dorner B., Ivanov A., Jorge Serrano, Krisch M., Malorny M., Stojetz B., Strauch D.Fuentes:scopus