Four current examples of characterization of silicon carbide

Conference Object

Abstract: A description is given of the profiling of CVD grown 3C SiC on undulant (001) Si using low temperatu

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Autores:

Bai S., Cardona M., Choyke W.J., Devaty R.P., Dorner B., Hobgood D., Jorge Serrano, Ke Y., Kimoto T., Nagasawa H., Porter L.M., Shigiltchoff O., Shishkin Y., Stojetz B., Strauch D.

Fuentes:

scopus