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Design and optimization of hole collectors based on nc-SiO<inf>x</inf>:H for high-efficiency silicon heterojunction solar cells
ArticleAbstract: Low activation energy (Ea) and wide bandgap (Eg) are essential for (p)-contacts to achieve effectivePalabras claves:Activation energy (E ) a, Contact resistivity (ρ ) c, Hydrogenated nanocrystalline silicon oxide (nc-SiO :H) x, Interface treatment, optoelectrical properties, Silicon heterojunction (SHJ)Autores:Han C., Isabella O., Mazzarella L., Paul Procel, Weeber A., Yang G., Zeman M., Zhao Y.Fuentes:scopusHigh-efficiency black IBC c-Si solar cells with poly-Si as carrier-selective passivating contacts
ArticleAbstract: In this work, we present the application of poly-Si carrier-selective passivating contacts (CSPCs) aPalabras claves:Carrier selective passivating contact, IBC c-Si solar cells, Light in-coupling, Poly-siliconAutores:Guo P., Isabella O., Limodio G., Paul Procel, Weeber A., Yang G., Zeman M.Fuentes:scopus