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Background impurities and a delta-doped QW. Part I: Center doping
ArticleAbstract: The influence of shallow background donor impurities on the energy characteristics of the SiGe/Si/SiPalabras claves:Impurity binding energy, Modulation doping, self-consistent calculation, semiconductor quantum wellsAutores:Akimov V., David Laroze, Demediuk R., Duque C.A., Kovalov V., Morales A.L., Sushchenko D., Tiutiunnyk A., Tulupenko V.Fuentes:scopusBackground impurities in a delta-doped QW. Part II: Edge doping
ArticleAbstract: This is the second part of our study of the background impurity influence on the intersubband energyPalabras claves:Impurity binding energy, Modulation doping, Quantum well, self-consistent methodAutores:Akimov V., David Laroze, Demediuk R., Duque C.A., Kovalov V., Morales A.L., Sushchenko D., Tiutiunnyk A., Tulupenko V.Fuentes:scopusInfluence of conduction-band non-parabolicity on terahertz intersubband Raman gain in GaAs/InGaAs step asymmetric quantum wells
ArticleAbstract: The conduction electron states in step-like strained GaAs/InGaAs quantum wells are theoretically invPalabras claves:Autores:David Laroze, Duque C.A., Mora-Ramos M.E., Pérez-Quintana I., Tiutiunnyk A.Fuentes:scopusStrain effects on the electronic and optical properties of kesterite Cu<inf>2</inf> ZnGeX<inf>4</inf> (X = S, Se): First-principles study
ArticleAbstract: Following the chronological stages of calculations imposed by the WIEN2K code, we have performed a sPalabras claves:CZGS, CZGSe, Kesterite, optical properties, Strain engineeringAutores:Courel Piedrahita M., David Laroze, El-Yadri M., Farkous M., Feddi E.M., Hamdaoui J.E., Kria M., Laura M. Pérez, Ojeda M., Tiutiunnyk A.Fuentes:scopus