Nonlinear device model for GaN and GaAs microwave transistors including memory effects

Conference Object

Abstract: In this paper, a new technique for modeling GaN and GaAs transistors is presented. The technique can

Palabras claves:

FET, GAAS, GaN, memory effects, Microwave devices, Modeling, pulsed measurements, Scattering parameters

Autores:

Barbin S., Guillermo Rafael-Valdivia, Mendoza T., Urquizo A.

Fuentes:

scopus