Structural, morphological and electrical properties of nickel oxide thin films deposited by reactive sputtering

Article

Abstract: This paper is devoted to the study of the influence of oxygen content in the nickel oxide films on t

Palabras claves:

C-AFM, DC reactive sputtering, Electrical characterization, Nickel oxide, Nickel vacancy

Autores:

Corraze B., Ferrec A., Goullet A., Javier García Molleja, Jouan P.Y., Keraudy J., Richard-Plouet M.

Fuentes:

scopus