Defect-centric distribution of channel hot carrier degradation in nano-MOSFETs

Article

Abstract: The defect-centric distribution is used, for the first time, to study the channel hot carrier (CHC)

Palabras claves:

channel hot-carrier, defect-centric distribution, nFET

Autores:

Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L.

Fuentes:

google

scopus