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On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT
ArticleAbstract: This experimental study focuses on the positive bias temperature instability (PBTI) in a fully recesPalabras claves:AlGaN/GaN MOS-HEMT, Oxide traps, PBTI, Recessed gate, SiO 2Autores:Crupi F., Eliana Acurio, Iucolano F., Magnone P., Meneghesso G., Trojman L.Fuentes:googlescopusImpact of AlN layer sandwiched between the GaN and the Al<inf>2</inf>O<inf>3</inf> layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs
ArticleAbstract: This work compares the performance and the reliability of recessed-gate AlGaN/GaN MOS-HEMTs with twoPalabras claves:Al O 2 3, BTI, GaN, MOS-HEMTsAutores:Crupi F., Eliana Acurio, Iucolano F., Magnone P., Trojman L.Fuentes:googlescopusReliability in GaN-based devices for power applications
Conference ObjectAbstract: This paper analyzes two important reliability issues in AlGaN/GaN devices: positive bias temperaturePalabras claves:AlGaN/GaN SBD, breakdown voltage, de-trapping, GET, MOS-HEMT, PBTI, reliability, TDDB, TRAPPINGAutores:Bakeroot B., Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Iucolano F., Ronchi N., Trojman L.Fuentes:googlescopus