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Characterization and Modeling of BTI in SiC MOSFETs
Conference ObjectAbstract: SiC power MOSFETs have been investigated by performing two different kinds of measurements, the hystPalabras claves:Autores:Consentino G., Cornigli D., Crupi F., Fiegna C., Reggiani S., Sánchez Luis, Sangiorgi E., Tallarico A.N., Valdivieso C.Fuentes:scopusA comparative study of MWT architectures by means of numerical simulations
Conference ObjectAbstract: In order to improve the efficiency of c-Si and mc-Si solar cells, Metal Wrap Though (MWT) architectuPalabras claves:back contact, MWT, numerical simulation, Photovoltaics, Solar cell, VíaAutores:Crupi F., Fiegna C., Frei M., Magnone P., Marco Lanuzza, Rose R.D., Sangiorgi E., Tonini D.Fuentes:scopusOptimization of rear point contact geometry by means of 3-D numerical simulation
Conference ObjectAbstract: In this work three-dimensional (3-D) numerical simulations, validated by the experimental measuremenPalabras claves:3-D device simulation, Electro-plated Cu contacts, High sheet resistance emitter, PERC, Si solar cellsAutores:Das J., De Castro A.U., Dross F., Fiegna C., Marco Lanuzza, Rose R.D., Sangiorgi E., Tous L., Van Wichelen K., Zanuccoli M.Fuentes:scopus