Mostrando 4 resultados de: 4
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Publisher
2010 14th International Workshop on Computational Electronics, IWCE 2010(1)
Microelectronics Journal(1)
Physical Review B(1)
Technical Digest - International Electron Devices Meeting, IEDM(1)
Área temáticas
Física aplicada(3)
Electricidad y electrónica(2)
Física(1)
Física moderna(1)
Ingeniería y operaciones afines(1)
Origen
scopus(4)
3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity
ArticleAbstract: We report a numerical study of both donor- and acceptor doping impurity effects in the quantum transPalabras claves:Doping impurity, Green's function, Nanowire transistors, Quantum transport, SimulationAutores:Bescond M., Lannoo M., Laurent Raymond, Michelini F., Pala M.Fuentes:scopusQuantum treatment of phonon scattering for modeling of three-dimensional atomistic transport
ArticleAbstract: Based on the nonequilibrium Green's function formalism, we show a numerically efficient method to trPalabras claves:Autores:Bescond M., Cavassilas N., Lannoo M., Laurent Raymond, Lee Y., Logoteta D., Luisier M.Fuentes:scopusThree-dimensional k.p quantum simulations of p-type nanowire MOS transistors: Influence of ionized impurity
Conference ObjectAbstract: We have developed a full three-dimensional real-space quantum transport simulator for p-type nanowirPalabras claves:Acceptor, Hole, Impurity, k.p method, Nanowire, Quantum, Resonant interferences, transportAutores:Bescond M., Cavassilas N., Lannoo M., Laurent Raymond, Michelini F., Pons N.Fuentes:scopusTime-resolved quantum transport for optoelectronics
Conference ObjectAbstract: We investigate time-resolved energy currents in a molecular optoelectronic junction made of two donoPalabras claves:Autores:Beltako K., Bescond M., Cavassilas N., Laurent Raymond, Michelini F.Fuentes:scopus