Mostrando 2 resultados de: 2
Filtros aplicados
Publisher
Physical Review B(1)
Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009(1)
Origen
scopus(2)
Influence of ionized impurities in silicon nanowire MOS transistors
Conference ObjectAbstract: This study presents ionized impurity impacts on silicon nanowire MOS transistors. We first calculatePalabras claves:Green's function, Impurity, Modeling, Nanowire, Quantum transport, transistorAutores:Bescond M., Lannoo M., Laurent Raymond, Michelini F., Pala M.Fuentes:scopusQuantum treatment of phonon scattering for modeling of three-dimensional atomistic transport
ArticleAbstract: Based on the nonequilibrium Green's function formalism, we show a numerically efficient method to trPalabras claves:Autores:Bescond M., Cavassilas N., Lannoo M., Laurent Raymond, Lee Y., Logoteta D., Luisier M.Fuentes:scopus