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Publisher: "18th International Workshop on Computational Electronics, IWCE 2015"

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The impact of lead geometry and discrete doping on NWFET operation

Conference Object

Abstract: This work investigates the influence of discrete dopant positions and lead geometry on the contact r

Palabras claves:

Dielectrics, Doping, Geometry, Impurities, Logic gates, Semiconductor process modeling, silicon

Berrada S., Bescond M., Cavassilas N., Lannoo M., Laurent Raymond