Band-Gap Engineering: Lithium Effect on the Electronic Properties of Hydrogenated 3C-SiC (1 1 0) Surfaces

Article

Abstract: Silicon carbide has structural strength, high electronic conductivity, low diffusion barrier and hig

Palabras claves:

band-gap, DFT, DOS, Electronic properties, Formation energy, GGA framework, lithium batteries, PDOS, SiC-Li, surfaces

Autores:

José Luis Cuevas, Martínez M.O., Saravana Prakash Thirumuruganandham

Fuentes:

google

scopus