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International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz(2)
Applied Sciences (Switzerland)(1)
Nanomaterials(1)
Optics Letters(1)
Physica Status Solidi - Rapid Research Letters(1)
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Física aplicada(6)
Electricidad y electrónica(4)
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Ingeniería electrónica(5)
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scopus(8)
First Study on the Electronic and Donor Atom Properties of the Ultra-Thin Nanoflakes Quantum Dots
ArticleAbstract: Nanoflakes ultra-thin quantum dots are theoretically studied as innovative nanomaterials deliveringPalabras claves:Binding energy, Donor impurity, Ground state energy, Nanoflakes, Ultra-thin quantum dotAutores:Belamkadem L., Boussetta R., Chnafi M., David Laroze, Duque C.A., Kasapoglu E., Laura M. Pérez, Meziani Y.M., Mommadi O., Moussaouy A.E., Tulupenko V., Vinasco J.A.Fuentes:scopusElectromagnetic Simulation of the Sub-THz Radiation Coupling to n-channel strained-silicon MODFETs
Conference ObjectAbstract: We report on a study of the coupling of electromagnetic radiation to a strained-silicon MODFETs usedPalabras claves:Autores:Calvo-Gallego J., Delgado-Notario J.A., Fobelets K., Meziani Y.M., Miguel Ferrando-Bataller, Velazquez-Perez J.E.Fuentes:scopusElectromagnetic Simulation to Determine Mesoscopic Dielectric Particle Parameters for Optimal Terajet Effect
Conference ObjectAbstract: This paper reports on optimization of the parameters, by mean of electromagnetic simulations to obtaPalabras claves:Autores:Abidi E.H., Calvo-Gallego J., Delgado-Notario J.A., Fobelets K., Meziani Y.M., Miguel Ferrando-Bataller, Minin I.V., Minin O.V., Velazquez-Perez J.E.Fuentes:scopusEffect of the front and back illumination on sub-terahertz detection using n-channel strained-silicon MODFETs
ArticleAbstract: Plasma waves in semiconductor gated 2-D systems can be used to efficiently detect Terahertz (THz) elPalabras claves:electromagnetic simulation, MODFET, SiGe, silicon, terahertzAutores:Calvo-Gallego J., Delgado-Notario J.A., Fobelets K., Meziani Y.M., Miguel Ferrando-Bataller, Velazquez-Perez J.E.Fuentes:scopusNumerical study of the coupling of sub-terahertz radiation to n-channel strained-silicon modfets
ArticleAbstract: This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulationdoped fieldPalabras claves:electromagnetic simulation, MODFET, SiGe, silicon, Strained-Si, terahertzAutores:Calvo-Gallego J., Delgado-Notario J.A., Fobelets K., Meziani Y.M., Miguel Ferrando-Bataller, Moussaouy A.E., Velazquez-Perez J.E.Fuentes:scopusImprovement of a Terahertz Detector Performance Using the Terajet Effect in a Mesoscale Dielectric Cube: Proof of Concept
ArticleAbstract: Herein, a simple terahertz (THz) receiver that uses subwavelength focusing of the THz beam on the dePalabras claves:detector sensitivity, dielectric cube, gain enhancement, terahertz detectors, terajet effectAutores:Calvo-Gallego J., Delgado-Notario J.A., Meziani Y.M., Miguel Ferrando-Bataller, Minin I.V., Minin O.V., Velazquez-Perez J.E.Fuentes:scopusImaging resolution enhancement using terajet effect at 0.3 THz
Conference ObjectAbstract: In the present work, we report on resolution enhancement of a terahertz imaging system using the terPalabras claves:Field Effect Transistor, imaging, terahertz, Terahertz detector, TerajetAutores:Baranov P.F., Calvo-Gallego J., Delgado-Notario J.A., Fobelets K., Meziani Y.M., Miguel Ferrando-Bataller, Minin I.V., Minin O.V., Salvador-Sánchez J., Velazquez-Perez J.E.Fuentes:scopusResponsivity enhancement of a strained silicon field-effect transistor detector at 0.3 THz using the terajet effect
ArticleAbstract: We report on the enhancement of responsivity by more than one order of magnitude of a silicon-basedPalabras claves:Autores:Calvo-Gallego J., Delgado-Notario J.A., Fobelets K., Meziani Y.M., Miguel Ferrando-Bataller, Minin I.V., Minin O.V., Salvador-Sánchez J., Velazquez-Perez J.E.Fuentes:scopus