Implantation-based passivating contacts for crystalline silicon front/rear contacted solar cells

Article

Abstract: In this work, we develop SiOx/poly-Si carrier-selective contacts grown by low-pressure chemical vapo

Palabras claves:

Doping, Ion implantation, passivating contacts, Poly-silicon, Silicon solar cells

Autores:

De Groot Y., Isabella O., Limodio G., Mazzarella L., Paul Procel, Weber A.W., Yang G., Zeman M.

Fuentes:

scopus