First principles band gap engineering of [1 1 0] oriented 3C-SiC nanowires

Article

Abstract: Silicon carbide nanowires offer excellent opportunities for technological applications under harsh e

Palabras claves:

DFT, Formation energy, SiC Nanowires, surface passivation

Autores:

Cruz-Irisson M., de Santiago F., José Luis Cuevas, Miranda A., Pérez L.A., Ramírez J., Trejo A.

Fuentes:

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scopus