Realizing the Potential of RF-Sputtered Hydrogenated Fluorine-Doped Indium Oxide as an Electrode Material for Ultrathin SiO <inf>x</inf>/Poly-Si Passivating Contacts

Article

Abstract: In high-efficiency silicon solar cells featuring carrier-selective passivating contacts based on ult

Palabras claves:

carrier-selective passivating contacts, hydrogen annealing, hydrogenated fluorine-doped indium oxide (IFO:H), transparent conductive oxide (TCO), ultrathin SiO /poly-Si passivating contacts x

Autores:

Eijt S., Han C., Isabella O., Mazzarella L., Montes A., Paul Procel, Schut H., Yang G., Zeman M., Zhang X., Zhao Y.

Fuentes:

scopus